Innovative characterization techniques for ultra-scaled FinFETs

This paper describes the first single impurity metrology study and the first experimental study of the behavior of the active cross-section area in function of gate voltages (V
_G
) for undoped FinFETs. From one side we show how we can identify chemical species, electric field and position for a donor present in the channel of a doped FinFET. From another side, for the undoped devices, we propose a mechanism of inversion of the bands from flat band to band bending in the interface regions respectively, all as a function of V
_G
. By doing these we have confirmed the possibility that a combination of low temperature measurements and TB simulation techniques can be used to investigate transport in nano-scale FET devices. We have furthermore also given some answers to the fundamental technological question on how to obtain the best FinFET geometry for electronic functionalities.