Schottky barrier single electron and single hole transistors

Schottky barrier single electron/hole transistor (SB-SET/SB-SHT) are manufactured using erbium-silicide and platinum-silicide as source and drain materials. In room temperature, the manufactured SB-SET and SB-SHT showed typical FET behavior with high drive current, 550 and −376 µA/µm, respectively. At 7 K, these devices showed SET and SHT characteristics. The measured coulomb gaps are about 170 mV for the SB-SET and 220 mV for the SB-SHT. From these, the estimated sizes of the islands are 12.5 and 9.1 nm, respectively. In SB-SET and SB-SHT, high transconductance can be easily achieved because silicided electrode eliminates parasitic resistance. Moreover SB-SET and SB-SHT can be operated as conventional FET and SET/SHT depending on the bias conditions, which is very promising for SET/FET and SHT/FET hybrid applications.