Physical parametric analysis of 16nm n-channel Carbon-Nanotube transistors for manufacturability

Carbon-Nanotube MOSFET (CN-MOSFET) is a promising future device candidate. The electrical characteristics of 16nm N-type CN-MOSFETs are explored in this paper. The optimum high-speed N-type CN-MOSFET device profiles with different number of tubes are identified for achieving the highest on-state to off-state current ratio (I
_on
/I
_off
) with a high substrate (bottom gate) bias voltage. Technology development guidelines for achieving high-speed, area efficient, and manufacturable integrated circuits are provided.