Self-assembled InAs/GaAs quantum dot molecules with InxGa1−xAs strain-reducing layer

Self-assembled lateral InAs quantum dot molecules (QDMs) with In
_x
Ga
_1-x
As strain-reducing layer are grown by metal-organic chemical vapor deposition. A redshift of emission wavelength and wideband photoluminescence spectra of QDMs are observed, which make QDM a potential candidate for broadband optical devices.