Schred V2.0: Tool to model MOS capacitors

In this paper we present SCHRED V2.0 to the scientific community. This simulation tool allows modeling of MOS capacitors with silicon and strained-Si substrates with arbitrary crystallographic directions. The tool can also model any material whose conduction band model is represented with three significant valleys. It is also capable of modeling a MOS capacitor with High-K Dielectric. Simulation results are presented which illustrate the versatility of the tool.