A multi-scale approach for performance assessment of hydrogenated graphene Field-Effect Transistors

Performance analysis of Field Effect Transistors based on hydrogenated graphene is performed through a multi-scale approach based on calculations of the energy bands by means of GW approximation, a three-nearest neighbor (3NN) sp
³
tight-binding Hamiltonian, and a ballistic transport model. The considered device exhibits large I
_on
and I
_on
/I
_off
ratios, due to the large bandgap, with reduced lithographic constrains as compared to one-dimensional channels.