Handshaking multiscale thermal model of nanostructured devices

In this work we present a multiscale method to model self-heating effects in nanostructured devices. While the heating is modeled within the drift-diffusion approximation, the heat dissipation is computed by means of a concurrent coupling between a Phonon Boltzmann Transport Equation (PBTE) based method and the Fourier model. We develop the way to connect the two models to each other and apply the implemented scheme to a GaN based High Electron Mobility Transistor (HEMT).