Simulation of Landau quantization effects due to strong magnetic fields in (110) Si hole inversion layers

Landau quantization due to strong magnetic fields is simulated for (110) Si hole inversion layers. The simulations are based on the self-consistent solution of the 6×6 K⃗·p⃗ Schrodinger equation (SE) and Poisson equation (PE). A new method to solve the 2D K·p SE is presented. The new simulations take into account Landau quantization, Zeeman spin splitting and size quantization at the same time. Oscillations of the density of states at the Fermi level (D
_F
(B) or D
_F
(V
_G
)) are demonstrated. The oscillations of the simulated D
_F
(V
_G
) characteristics are similar to the oscillations that measured transconductance versus gate voltage (g
_m
(V
_G
)) characteristics show for the same samples and identical conditions.