Double δ-doped AlGaAs/InGaAs MOS-pHEMTs by using ozone water oxidation treatment

This work investigates device performances of an AlGaAs/InGaAs metal-oxide-semiconductor pseudomorphic high electron mobility transistor (MOS-pHEMT) by using ozone water oxidation treatment. Experiment results indicate that the studied MOS-pHEMT has demonstrated superior device characteristics as compared to a conventional pHEMT without oxidation treatment on the same epitaxial structure. The studied MOS (conventional)-pHEMT exhibits improved power-added-efficiency (P.A.E.) of 39.6 (36)%, unity-gain cut-off frequency (f
_T
) of 19.3 (16.8) GHz, maximum oscillation frequency (f
_max
) of 30.6 (26.7) GHz, minimum noise figure (NF
_min
) of 1.21 (1.48) dB, and excellent two-terminal gate-drain breakdown voltage (BV
_GD
) of - 43.1 (-7.9) V, respectively