A SiGe:C BiCMOS LNA for 94GHz band applications

A new low noise amplifier (LNA) dedicated to 94 GHz band has been implemented in a 130 nm BiCMOS technology intended for millimeter waves applications. The circuit is a single stage cascode amplifier utilizing transmission lines and MIM capacitors for input, output and inter-stage matching. On chip measurements show a 9.08 dB maximum peak of power gain at 94.7 GHz and a 1 dB compression point at -14.9 dBm of input power. The noise figure is 8.6 dB and the power consumption is 13 mW.