Si integrated photoreceivers

This paper reviews 850nm Si photodetectors and integrated photoreceivers realized with standard Si process technologies including CMOS and BiCMOS. Such photodetectors and photoreceivers are of great interest as they can provide cost-effective optical interconnect receiver solutions. High-speed integrated photoreceivers can be achieved by spatially modulated light, lateral PIN, and P
⁺
/N-well junction photodetectors and their performances can be further enhanced with electronic equalizers, all of which can be realized with the standard Si technology.