Temperature interaction of Early voltage, current gain and breakdown characteristics of npn and pnp SiGe HBTs on SOI

We present a comprehensive investigation of temperature dependence of breakdown voltage, DC current gain (β), and Early voltage (V
A
) for complementary SiGe-npn and SiGe-pnp bipolar transistors fabricated on an advanced CBiCMOS technology on thick-film SOI. Both SiGe-npn and SiGe-pnp transistors show decreasing V
A
as ambient operating temperature increases from −60°C to +200°C for low collector current densities (J
C
≤ 5.0 µA/µm
²
) with a near linear inverse temperature (1/T) relationship. We also demonstrate in the region historically defined by weak self-heating interactions that V
A
maintains minimal sensitivity to operating temperature.