AlGaN/GaN dual gate MOS HFET for power device applications

Dual gate AlGaN/GaN MOS HFET with Al
₂
O
₃
as gate oxide layer was fabricated. In comparison with normal dual gate Schottky HFET, dual gate MOS HFET exhibits much lower gate leakage current, larger transconductance and output current. Besides, the dual gate MOS HFET shows excellent breakdown characteristic.