Self-consistent simulation of PRAM with comprehensive physical models

A comprehensive simulation of PRAM including the electrical transport, thermal diffusion, phase change dynamics and percolation effect is presented. They are fully coupled to each other in order to reflect the fundamental physical process in the programming operation of PRAM cell. By means of the developed simulation method, both programming operations and impacts of thermal boundary resistance (TBR) are evaluated. The simulation results show that SET time is more sensitive to TBR, which causes a remarkable drift of R-t
_set
characteristic.