Electrical and physical characteristics of the high-K Tb2O3 (terbium) dielectric deposited on the polycrystalline silicon

In this study, the electrical characteristics of high-k Tb
₂
O
₃
polyoxide capacitors combined with rapid thermal post annealing have been improved (i.e.lower leakage current, higher electrical breakdown filed and lower electron trapping rate). The post-RTA annealing treatment can passivate and reduce trap states to terminate dangling bonds and traps in the high-k Tb
₂
O
₃
dielectric and the interface between high-k dielectric and polysilicon.