100mV noise performances of Te-doped Sb-HEMT

In this paper, we present the noise measurement results of InAs/AlSb HEMTs at room temperature under very low drain bias (100mV) at 30GHz. Under these dc bias conditions the transistor exhibit NF
_min
=1.56 dB and G
_ass
=5.3dB @30 GHz for P
_dc
= 7.3μW/μm. These results are compared to our previous work and the great improvements observed open up the possibility to develop a 100mV electronics at room temperature.