Development of a Megahertz High-Voltage Switching Pulse Modulator Using a SiC-JFET for an Induction Synchrotron

This paper evaluates the capability of a silicon carbide junction field-effect transistor for an induction synchrotron. The device was operated with a repetition rate of 1 MHz, a drain-source voltage of 1 kV, and a drain current of 50 A in burst mode. Based on the results, the feasibility of continuous-mode operation from the point of view of maximum junction temperature is evaluated. If the total thermal resistance is smaller than 0.7°C/W, the device has potential to be applied in an induction synchrotron.