Chemical Bath Deception In2S3 Buffer Layer of CuInS2 Film Solar Cells

Indium chloride (InCl
₃
· 4H
₂
O), thioacetamide (CH
₃
CSNH
₂
) mixed solution for the precursor solution, adding an appropriate amount of citric acid for complexing agent, uniform films In
₂
S
₃
was prepared by chemical bath deposition method on glass substrate surface. And X-ray diffraction (XRD), scanning electron microscopy (SEM), UV-visible light photometer was used for the analysis and characterization of thin films. The acidity of solution, reaction temperature, deposition time and the addition of citric acid complexing agents and other factors on the impact of thin film deposition In
₂
S
₃
thin film were studied. The results showed that: The deposition conditions for the film were in the pH value of 2, deposition time of 10h, deposition temperature of 80 . Under these conditions the films were obtained from the reaction system with well crystallinity, crystal structure of cubic structure, and different thin films band gap of about 2.5eV.