A Precision Dose Control Circuit for Maskless E-Beam Lithography With Massively Parallel Vertically Aligned Carbon Nanofibers

This paper describes a highly accurate dose control circuit (DCC) for the emission of a desired number of electrons from vertically aligned carbon nanofibers (VACNFs) in a massively parallel maskless e-beam lithography system. The parasitic components within the VACNF device cause a premature termination of the electron emission, resulting in underexposure of the photoresist. In this paper, we compensate for the effects of the parasitic components and noise while reducing the area of the chip and achieving a precise count of emitted electrons from the VACNFs to obtain the optimum dose for the e-beam lithography.