Growth of InGaN quantum wells and InGaN/GaN quantum well LEDs by MOCVD

InGaN quantum wells (QWs) and InGaN/GaN LED structures were grown by atmospheric pressure MOCVD on c-plane sapphire using the precursors trimethylgallium (TMGa), trimethylindium (TMIn), trimethylaluminum (TMAl) and ammonia. Si/sub 2/H/sub 6/ and cyclopentadienylmagnesium (Cp/sub 2/Mg) were used as n- and p-type dopants, respectively. GaN growth was performed at 1080/spl deg/C, the InGaN layers were deposited at temperatures between 700 and 830/spl deg/C. InGaN QWs with an indium content up to 25 % were implemented in double heterostructure LEDs. The devices showed blue luminescence visible in bright room light. The current-voltage characteristics of the double heterostructure LEDs exhibited a forward voltage of 3.6 V at 20 mA.