Improvement of reliability characteristics using the N2 implantation in SOHOS flash memory

In this paper, device performance and reliability characteristics are investigated and discussed in Fin-type SONOS and SOHOS flash memory device. We also proposed the N
₂
implantation method for improvement of reliability characteristics in SOHOS flash memory device. It shows that data retention characteristic in N
₂
implantation SOHOS device is improved due to the nitrogen induced-deep traps, while its P/E speed is degraded by additional nitrogen in high-k trapping layer.