Properties of small-aperture selectively oxidized VCSELs

Summary form only given. In summary, we have developed an accurate first-principles analysis to probe the threshold properties of selectively oxidized 850 nm AlGaAs QW VCSELs. The analysis of our present VCSELs indicates that in order to achieve ultralow threshold, oxide aperture scattering loss and leakage currents must be addressed. The agreement between our calculations and experiment solidify our understanding and enable the identification of fundamental limitations of low threshold VCSEL operation. The performance and analysis of modified VCSEL designs will be reported.