GaAs MESFETs on InP substrates grown using chloride close-proximity reactor system

DC and microwave characteristics of GaAs metal-semiconductor field-effect transistors (MESFETs) on InP grown using the chloride close-proximity reactor (CPR) system are reported. The FETs have an extrinsic maximum transconductance of 210 mS/mm for a drain saturation current of 110 mA/mm, a cutoff frequency of unity current gain of 13 GHz, and a maximum frequency of oscillation of 21 GHz. The dislocation density in a 1.6- mu m GaAs layer on InP is 10/sup 8/ cm/sup -2/ measured from cross-sectional transmission electron microscopy (TEM). The full width at half maximum of