Noise Characterization of Midwave Infrared InAs/GaSb Superlattice pin Photodiode

We report on noise characterization of a midwave infrared (MWIR) InAs/GaSb superlattice (SL) single detector. The SL structure was made of eight InAs monolayers (MLs) and eight GaSb MLs, with a total thickness of 2
$\mu\hbox{m}$
(440 SL periods). This structure exhibits a cut-off wavelength of 4.8
$\mu\hbox{m}$
at 77 K. Extracted from current–voltage characteristics, zero-bias resistance area product
${R} _{0}{A}$
above
$5\times 10 ^{5} ~\Omega \cdot \hbox{cm}^{2}$
at 80 K was measured. Noise measurements were also performed under dark conditions. The measurements reveal the absence of
$ 1/{f}$
noise above 30 Hz. Moreover, the detector under test remains Schottky noise-limited up to a bias voltage of
$-$
200 mV typically, which confirms the quality of the MWIR SL pin photodiode.