Geometric Magnetoresistance Mobility Extraction in Highly Scaled Transistors

Geometric magnetoresistance (gMR) provides a promising solution to the difficult challenges associated with channel mobility extraction in nanoscale transistors. However, this technique requires significant experimental considerations which are uncommon in most laboratories. In addition, removing the influence of series resistance on the extracted mobility introduces further difficulty. In this letter, we present a new gMR measurement methodology that not only greatly simplifies the experimental requirements but also yields mobility values which are free from series resistance effects.