Ultra-low resistance, nondestructive contact system for InP/InGaAs/InP double heterostructure TPV devices

A contact system for use on the n/sup +/ InP window layer of an InP/InGaAs/InP thermophotovoltaic (TPV) cell is described. The contact system, composed of an Au-7 at.% Ge mixture, exhibits very low contact resistivity values on both lattice matched and lattice mismatched heterostructures without the need for contact sintering. Specific contact resistivity values in the low 10/sup -6/ /spl Omega/-cm/sup 2/ range are achieved (without sintering) for the lattice matched devices. For the lattice mismatched devices resistivity values approaching the theoretical minimum value in the mid 10/sup -8/ /spl Omega/-cm/sup 2/ range are achieved, again without sintering.