Influence of GaN surface morphology on characteristics of Al0,3Ga0,7N/GaN heterostructures created by molecular beam epitaxy

The technique of forming III-N layers with low defects level is developed. It is based on method of molecular beam epitaxy with atomic force microscopy using. It is demonstrated that the structure perfection of layers, which is estimated by the surface defects number, is directly connected with two-dimensional electron gas (2DEG) characteristics in formed heterostructures.