Nitride gallium high power integrated heterostructure FETs

The heterostructures AlGaN/AlN/GaN, grown on sapphire substrates, the standard design of the integrated power HFET and the design with the additional field-plate, and its technology have been developed. The HFETs have given output power 4,5-5,5 and 3-4 W/mm, and power gain 4,5-7,5 N 3,8-6,0 dB at frequencies 12 and 17,5 GHz.