The investigation of regularities of the initial stages of nanoclusters' formation and of the upgrowth of the germanium-doped polycrystalline silicon nanostructural films

It is shown that the main condition, under which the process of germanium (Ge) nanoclusters and of the solid silicon-germanium solution formation takes place, is the sorption of atoms of silicon (Si) and Ge on the dielectric base. All stages of the process depend on the purity of the initial base, its orientation and chemical composition of the gas mixture. The size of Ge nanoclusters may be independently checked by the way of changing of the thickness of the polycrystalline silicon (PCS) film at the constant Ge content in its volume. Fine-scaled chaotic islets are observed for all surfaces of the initial silicon (Si) base being investigated.