Estimation of overheating of p-n junction and its effect on degradation of silicon high-power pulse impatt diodes

The estimation of thermal limitations for pulse operation mode in the 8 mm-wave band of double-drift impact avalanche and transit-time (IMPATT) diodes with microwave power ≥20 W. It is shown that at pulse duration of 300 ns and amplitude of 11.3–15 A; overheating of p-n junction is 270–430 °C. The boundary value of temperature of p-n junction at which IMPATT diode degradation begins is found to be 350 °C.