Microscopic Modeling of RF Noise in Laterally Asymmetric Channel MOSFETs

A study of the high-frequency noise performance of laterally asymmetric channel (LAC) MOSFETs and conventional devices is presented. Particular attention is paid to the investigation of the influence of the intrinsic noise sources on the noise performance of the transistors. The improvement in the minimum noise figure of the LAC transistor as compared to a conventional MOSFET is analyzed in terms of reduced induced gate noise, higher cross correlation of drain and gate current fluctuations, and the enhancement of the device transconductance.