Dependence of the switching characteristics of resistance random access memory on the type of transition metal oxide

In this paper, a systematic approach using HfO
₂
, ZrO
₂
and TiO
₂
with TiN or Ti/TiN electrode has been conducted to research the best material for ReRAM device integration. From the experimental results and proposed model, the proper electrical properties such as the stability of switching variation, low current and voltage operation, long endurance and retention characteristics are obtained with a TiN/Ti/HfO
₂
/TiN structure.