Optimization of the crystallization phase of Rare-Earth aluminates For blocking dielectric application in TANOS type flash memories

Rare-Earth aluminates GdAlO and LuAlO are investigated as blocking dielectric for Al
₂
O
₃
replacement in TANOS flash memory devices. Since the energy bandgap of aluminates strongly depends on their crystallization phase and it is the highest for orthorombic phase, both materials were engineered using templates to assure the highest Eg and k-value after crystallization. As a consequence, the memory stack performances are significantly improved. Compared to Al
₂
O
₃
reference top dielectric, retention can be improved.