Growth and characterization of ingan for photovoltaic devices

In this work we present the growth and characterization of In
_x
Ga
_1-x
N-based materials and solar cells with x up to 0.54. Growth of single phase In
_x
Ga
_1-x
N is achieved using Plasma Assisted Molecular Beam Epitaxy (PAMBE) with flux modulation for active species. The material is characterized by x-ray diffraction, electrochemical capacitance-voltage, time-resolved photo-luminescence, and contactless electroreflectance. Fabricated devices are then studied for photo-response under simulated AM0 spectral conditions to evaluate solar cell characteristics. The dark and illuminated J-V results indicate the existence of significant shunt and series resistances arising from material defects and non-optimized device design.