Influence of doping profile of highly doped regions for selective emitter solar cells

The influence of the doping profile under the metallization for laser doped selective emitter solar cells is investigated. Laser doping allows profile tailoring to some extent by adapting the pulse energy, resulting in Gaussian doping profiles. Numerical calculations using PC1D show that the doping profile influences the recombination at the metal-semiconductor interface. The value J
_0e,met
is used to characterize this influence on solar cell level employing calculations with the 2-diode-model. Selective emitter solar cells have been fabricated to validate, whether this effect can be observed on cell level. IV measurements show a dependence of the open circuit voltage on the profile. This is determined to be partly due to a different 2
^nd
diode recombination current J
₀₂
for different doping profiles underneath the contact. The effect of J
_0e,met
is also ascertainable.