Microwave characterization of PZT/ZrO2 thin films

Dielectric properties of a two-layer of PZT/ZrO
₂
thin film have been characterized up to 50 GHz using the conformal mapping method. PZT/ZrO
₂
films are of interest to RF MEMS capacitive shunt switches due to the relatively high dielectric constant. In this measurement, relative dielectric constant values of approximately 120 and 200 were obtained at 50 GHz for the PZT/ZrO
₂
film and PZT film on ZrO
₂
, respectively. Corrected loss tangents of 0.06 and 0.03 were obtained at 25 GHz for PZT/ZrO
₂
and single ZrO
₂
, respectively.