Control of crystalline volume fraction of μC-Si thin film using 40.68 MHz PECVD system for solar cell application

Microcrystalline silicon thin films have been prepared through a mixture of silane and hydrogen gases using an excitation frequency of 40.68 MHz. For more cost reduction of solar cells, higher module efficiencies and deposition rates are required. This study tried to develop the low temperature processes of silicon thin film for solar cell deposition with a range of crystalline volume fractions around 60-75%. The microstructures of μc-Si intrinsic layer might be affected by the deposition parameters, such as power densities, substrate temperatures, the ratios of gas flow rates and deposition pressures. Based on the material analyses, an applicable structure of μc-Si film for solar cell application could be achieved.