Fabrication and characteristics of CuInSe2/CuIn(SexS1−x)2 structure by the sulfurization of CuInSe2 thin film

CuInSe
₂
/CuIn(Se
_x
S
_1-x
)
₂
structures have been fabricated on Mo/Glass substrate using Cu-poor or Cu-rich CuInSe
₂
thin film by RTP sulfurization at high temperature. The surface morphologies of CuInSe
₂
thin films could be changed with varied S amounts or ratio of Se/S during sulfurization. In our experimental results, the CuInSe
₂
/CuIn(Se
_x
S
_1-x
)
₂
structure was easy formed based on Cu-rich CuInSe
₂
thin film and the Cu
_x
Se phase was helpful to produce CuIn(Se
_x
S
_1-x
)
₂
film onto CISe film. But, the second phase (CuxSe) must be etching in KCN solution after sulfurization of CuInSe
₂
/CuIn(Se
_x
S
_1-x
)
₂
structures. The high quality and high open circuit voltage of chalcopyrite absorber had been made by co-evaporation and RTP sulfurization in this study.