GaN power FETs for next generation mobile communication systems

This paper presents the RF-performance of Al-GaN/GaN high electron mobility transistors (HEMT) for applications at L-/S-band frequencies. The powerbars provide a linear gain of 20.3 dB with 90 W output power operated at 50 V drain voltage in cw-operation with a maximum drain efficency of 59% at 2.14 GHz. This gain level is competititve to state-of-the-art LDMOS.