Performances of AlInN/GaN HEMTs for power applications at microwave frequencies

We report a comparative study on AlInN/GaN HEMTs on SiC substrates having four different processes and epitaxies. The outstanding performances of such devices will be explained thanks to intensive characterizations: pulsed-IV, [S]-parameters and load-pull at several frequencies from S to Ku bands. The measured transistors with 250nm gate lengths from different wafers delivered in cw: 10.8 W/mm with 60 % associated PAE at 3,5 GHz, 6.6 W/mm with 39% associated PAE at 10,24 GHz, and 4.2 W/mm with 43 % associated PAE at 18 GHz.