Integrated active loop sensor in SiGe technology for near-field scanning

This paper presents an integrated active loop sensor designed in IHP 0.25 μm SiGe:C HBT technology for near-field scanning of printed circuit boards (PCBs) as well as large scale integrated (LSI) circuits. Electromagnetic (EM) field simulation as well as on-wafer measurement results are presented for passive loop. A wideband amplifier with 23 dB gain and 10 GHz bandwidth is designed and measurement results are presented. Finally on-wafer measurement results for the integrated active loop sensor are presented.