High performance InSb QWFETs for low power dissipation millimetre wave applications

Indium antimonide (InSb) has the highest electron mobility and saturation velocity of any conventional semiconductor, giving potential for a range of analogue and digital ultra-high speed, low power dissipation applications. N-channel quantum well FETs have been fabricated with current gain cut-off frequency (f
_T
) of 305 GHz and power gain cut-off frequency (f
_max
) of 480 GHz at V
_DS
of only 0.5 V. Outline design confirms the potential for a 3 stage low noise amplifiers operating at more than 200 GHz, for applications such as integrated passive millimetre wave imaging.