Potentiality of commercial metamorphic HEMT at cryogenic temperature and low voltage operation

We present in this paper, a study of Dc, RF and Noise characteristics of an industrial metamorphic HEMT (High Electron Mobility Transistor) operating under low voltage at cryogenic temperature. The results at 300K are compared with the obtained results at cryogenic temperature. Temperature decrease makes device characteristics improve. This improvements allow to expect to develop a low power cryogenic electronic (LNA), featuring high frequency/noise performances below 100 mV DC biasing.