Enhanced terahertz transmission of GaN quantum wells

The transmission spectra at 300, 77, and 7 K of GaN quantum wells using a 220 - 325 GHz electronic source are investigated. Enhanced signals in the transmission spectra - interpreted as preliminary indications of the activation of the OPTTR mechanism - are obtained when a bias voltage is applied to the device. Results can be considered as a relevant step in the development of devices capable to produce THz radiations.