NMOSFET numerical model to investigate the heat conduction effects

Two dimensional numerical model of Si-NMOSFET with 0.2 μm gate length is proposed to investigate the effect of heat transfert on the transistor characteristics using comsol simulator. In addition to coupling Poisson and drift diffusion equations, the heat conduction equation is introduced in the numerical model. Temperature distribution due to the heat conduction is investigated. Simulation results show the effect of the heat conduction on the transistor characteristics in particular on I-V out-put characteristics, electric field and carriers velocity.