Evaluating the Influence of Various Body-Contacting Schemes on Single Event Transients in 45-nm SOI CMOS

We investigate the single-event transient (SET) response of T-body and notched-body contacted MOSFETs from a commercial 45 nm SOI RF-CMOS technology. Although body-contacted devices suffer from reduced RF performance compared to floating body devices, previous work on 65 nm and 90 nm MOSFETs has shown that the presence of a body-contact significantly mitigates the total ionizing dose (TID) sensitivity that is exhibited in floating-body SOI MOSFETs. The influence of body-contacting schemes on the single-event effect (SEE) sensitivity is examined here through time-resolved measurements of laser and microbeam-induced transients from T-body and notched-body MOSFETs. Laser-induced transients demonstrate the reduced SEE sensitivity of the notched-body MOSFETs as compared to the T-body MOSFETs; this is evidenced by a uniform reduction in the peak transient magnitudes and collected charge for transients captured at the worst-case bias of V
_DS
= 1.0 V, as well as with all terminals grounded. Microbeam-induced transient data are also presented to support the validity of the laser-induced transient data. Together, these data provide new insight into the RF versus TID versus SEE tradeoffs associated with body contacting schemes in nm-scale MOSFETs, an important concern for emerging space-based electronics applications.