Optimal design of III–V heterostructure MOSFETs

Sb based materials offer large VBO/CBO suitable for heterostructure design. The small CBO for InGaAs/InP NMOS can be overcome by intelligent use of modulation doping. A heterostructure design with T_CAP=1nm can reduce the effect of D_it (Fig. 11), lead to an order of magnitude reduction in BTBT (Fig. 13) and a 100/50% improvement in the I_Dsat (Fig. 14) while maintaining good electrostatic control in terms of subthreshold swing and DIBL (Fig. 11).