Modeling of vertical external cavity semiconductor laser with MQW resonant structure

Numerical model is developed of a VECSEL with a resonant gain structure pumped by a fast electron beam. Optical modes properties for resonator formed by Bragg reflector, chip boundary and external mirror were studied. For above threshold operation carrier density in each of QWs obeys non-linear diffusion equation. A new iteration procedure for round-trip operator evaluation was developed, which provides linear growth of computation time with a size of MQW.