Electroplated metallization method for crystalline silicon solar cells

Electroplating metallization method for crystalline silicon solar cell was investigated with new diffusion barrier layer, Ni, crystalline NiW (c-NiW), amorphous NiW (a-NiW). After annealed at various temperatures, sheet resistance of Ni/Cu, c-NiW/Cu and a-NiW/Cu was measured to observe the Cu diffusion barrier performance. The rapid increase in sheet resistance of Ni/Cu contact indicated that Ni has the worst diffusion barrier property. XRD analysis revealed that Cu atoms can hardly diffuse through a-NiW barrier layer. However, a-NiW layer has high resistivity, which may influence the solar cell efficiency.