Ion-implantation-based low-cost Hk/MG process for CMOS low-power application

This paper demonstrates for the first time a low cost, low complexity process CMOS Hk/MG for low-power applications with Vth controlled by gate Ion-Implantation (I/I) and High-k capping for NMOS and PMOS, respectively. Novel advanced electrical and physical characterizations provide unique insights about the underlying mechanism of Vth adjust induced by I/I into the metal. Improved RO performance, with excellent uniformity and matching characteristics have been achieved without reliability degradation.